Manufacturing Technology 2025, 25(1):143-151 | DOI: 10.21062/mft.2025.013

Investigation on the Effect of Nano-Cutting Liquid on the Cutting Quality of Large Diameter Silicon Wafer

Wei Zhang ORCID...1,2, Lixian Wang ORCID...2
1 School of Mechanical and Electrical Engineering, Ningbo Polytechnic, Ningbo, 315800, China
2 Ningbo Shuaitelong Group Co., Ltd, Ningbo, 315000, China

To enhance the effective penetration of cutting fluid into the depth of the cutting joint, a nano-cutting liquid atomization method has been proposed to improve the cutting quality of diamond wire sawing. A six-inch large diameter silicon wafer (150 mm diameter) diamond wire saw cutting experimental platform was constructed. The base liquid, nano SiO2, and nano SiC cutting liquid were utilized as the cutting fluids, and various cutting solutions were employed to compare the cutting quality of large diameter silicon wafers. The temperature field change, surface roughness of the silicon wafer, surface morphology, and warping of the silicon wafer were measured as evaluation indexes, and the impact law of different cutting solutions on the cutting quality of diamond wire saw was analyzed. The results indicate that nano-cutting fluid can reduce the roughness of silicon wafers and improve the surface morphology of silicon wafers. Mixing multiple nanoparticles can produce cutting fluids that further enhance wire saw cutting performance in actual diamond wire saw cutting technologies.

Keywords: Diamond Wire Saw, Nano-Sio2 Cutting Fluid, Nano-Sic Cutting Fluid, Silicon Wafer
Grants and funding:

This work has been funded by the Nature Science Foundation of Ningbo No. 2022J179 and NBPT 2022 National scientific research project cultivation subject No. NZ22GJ002

Received: December 2, 2024; Revised: February 28, 2025; Accepted: March 10, 2025; Prepublished online: March 11, 2025; Published: April 25, 2025  Show citation

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Zhang W, Wang L. Investigation on the Effect of Nano-Cutting Liquid on the Cutting Quality of Large Diameter Silicon Wafer. Manufacturing Technology. 2025;25(1):143-151. doi: 10.21062/mft.2025.013.
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